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Photomicrosensor (Reflective)
EE-SY169
Be sure to read Precautions on page 25.
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
? High-quality model with plastic lenses.
? Highly precise sensing range with a tolerance of ± 0.6 mm horizon-
tally and vertically.
? With a red LED sensing dyestuff-type inks.
? Limited reflective model.
? For lesser LED forward current the EE-SY169B would be a better
choice.
■ Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol
Rated value
Surface A
1 ± 0.1 dia.
(see note)
(see note)
Two, C0.2
1 ± 0.1 dia.
Emitter
Detector
Forward current
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
I F
I FP
V R
V CEO
40 mA
(see note 1)
300 mA
(see note 2)
3V
30 V
voltage
Emitter–Collector
voltage
Collector current
V ECO
I C
---
20 mA
A
Internal Circuit
C
Note: These dimensions are for
the surface A. Other lead
wire pitch dimensions are for
the housing surface.
Ambient tem-
perature
Collector dissipa-
tion
Operating
Storage
P C
Topr
Tstg
100 mW
(see note 1)
0 ° C to 70 ° C
–20 ° C to 80 ° C
K
E
Unless otherwise specified, the
tolerances are as shown below.
Soldering temperature
Tsol
260 ° C
(see note 3)
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions Tolerance
3 mm max. ± 0.3
3 < mm ≤ 6 ± 0.375
6 < mm ≤ 10 ± 0.45
10 < mm ≤ 18 ± 0.55
18 < mm ≤ 30 ± 0.65
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
2. The pulse width is 10 μ s maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
V F
I R
λ P
I L
I D
I LEAK
V CE (sat)
1.85 V typ., 2.3 V max.
0.01 μ A typ., 10 μ A max.
660 nm typ.
160 μ A min., 2,000 μ A max.
2 nA typ., 200 nA max.
2 μ A max.
---
I F = 20 mA
V R = 3 V
I F = 20 mA
I F = 20 mA, V CE = 5 V
White paper with a reflection ratio of 90%,
d = 4 mm (see note)
V CE = 5 V, 0 l x
I F = 20 mA, V CE = 5 V with no reflection
---
voltage
Peak spectral sensitivity wave- λ P
length
850 nm typ.
V CE = 5 V
Rising time
Falling time
tr
tf
30 μ s typ.
30 μ s typ.
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
V CC = 5 V, R L = 1 k Ω , I L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
154
EE-SY169 Photomicrosensor (Reflective)
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相关代理商/技术参数
EESY169A 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:SENSR OPTO TRANS 4MM REFL TH PCB 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin
EE-SY169A 功能描述:光学开关（反射型，光电晶体管输出） REFL CONV PHTOTRNSTR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
EE-SY169A 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH REFLECTIVE
EE-SY169A 制造商:Omron Electronic Components LLC 功能描述:OPTOSwITCH OPTOCOuPLER OuTPuT TyPE:TRANS
EESY169AD 制造商:OMRON AUTOMATION AND SAFETY 功能描述:PHOTOMICROSENSORW/PLASTIC COVR 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin
EE-SY169A-D 功能描述:PHOTOMICROSENSORW/PLASTIC COVR RoHS:是 类别:传感器，转换器 >> 光学 - 反射式 - 模拟输出 系列:- 产品变化通告:Product Discontinuation 03/Dec/2009 标准包装:50 系列:- 检测距离:0.157" (4mm) 检测方法:反射 电压 - 集电极发射极击穿（最大）:30V 电流 - 集电极 (Ic)（最大）:- 电流 - DC 正向(If):50mA 输出类型:光电晶体管 响应时间:10µs，50µs 安装类型:通孔 封装/外壳:PCB 安装 包装:散装 工作温度:-40°C ~ 85°C
EESY169B 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin
EESY169C 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk